AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (12) , 2448-2453
- https://doi.org/10.1109/3.14375
Abstract
A lateral current injection (LCI) multiquantum-well (MQW) laser having planar structure is proposed and its advantages compared with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It is shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF is obtained at zero bias voltage.Keywords
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