Large area, flat-panel a-Si:H arrays for x-ray imaging

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Abstract
The development of a large-area amorphous silicon array for x-ray imaging is described. The array comprises pixels made up of amorphous silicon transistors and photodiode sensors with a pixel-to-pixel pitch of 450 micrometers . With a format of 512 X 560 pixels, the array has an area of 23 by 25 cm2 making it the largest self-scanning, solid-state, pixelated imaging device ever reported. The first diagnostic x-ray images from such a large area device are demonstrated and a general review of the current state of this technology is given. The properties of such arrays are summarized and future anticipated developments discussed.

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