Technology challenges and solutions for 1Gbit and beyond
- 1 September 1998
- journal article
- abstracts
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 21 (1) , 15-25
- https://doi.org/10.1080/10584589808202047
Abstract
The need for higher DRAM densities, for cost effective manufacturing and the price pressure puts the DRAM development on a highly innovative path. The fast pace with which DRAM cell sizes are reduced results in many technology issues. This talk discusses the deep trench cell architecture, its advantages and the main technology innovations that have made the aggressive scaling of the DRAM cell possible. The issues related to Gbit DRAMs, the new challenges and potential innovations will be presented.Keywords
This publication has 0 references indexed in Scilit: