On an analytical solution for two-dimensional diffusion of silicon self-interstitials during oxidation of silicon
- 31 January 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (1) , 1-4
- https://doi.org/10.1016/0038-1101(82)90088-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) SiliconJournal of the Electrochemical Society, 1980
- The lateral effect of oxidation on boron diffusion in 〈100〉 siliconApplied Physics Letters, 1979
- Oxidation-enhanced diffusion of arsenic and phosphorus in near-intrinsic 〈100〉 siliconApplied Physics Letters, 1978
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974