Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (8) , 1779-1788
- https://doi.org/10.1109/16.57126
Abstract
No abstract availableKeywords
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