Initial stages of the interaction of nitrous oxide and oxygen with the (100) silicon surface under low pressures
- 1 April 1989
- journal article
- Published by Elsevier in Reactivity of Solids
- Vol. 7 (1) , 1-18
- https://doi.org/10.1016/0168-7336(89)80002-6
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- On the initial phase of native oxide formation on Si〈1 1 1〉Solid State Communications, 1984
- AES study of the low-pressure oxidation of Si(100): Electron beam effectsSurface Science, 1983
- Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2Journal of the Electrochemical Society, 1982
- Oxidation of silicon surfacesJournal of Vacuum Science and Technology, 1981
- The kinetics of the interactions of O2 and N20 with a Cu(110) surface and of the reaction of CO with adsorbed oxygen studied by means of ellipsometry, AES and LEEDSurface Science, 1979
- Electron-spectroscopic studies of the early stages of the oxidation of SiPhysical Review B, 1979
- Growth of thin SiO2 films on clean Si (111) surfaces by low-pressure oxidation and their evaporationPhysica Status Solidi (a), 1977
- Thermal Oxidation of Silicon: In Situ Measurement of the Growth Rate Using EllipsometryJournal of the Electrochemical Society, 1975
- The adsorption of oxygen on silicon (111) surfaces. IISurface Science, 1974
- Ellipsometry in the sub-monolayer regionSurface Science, 1969