Amorphous silicon p-i-n solar cells with graded interface
- 27 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17) , 1089-1091
- https://doi.org/10.1063/1.97430
Abstract
The influence of inserting a thin graded interface layer at the p/i interface on the short‐wavelength response and on the overall performance of amorphous silicon p‐i‐n solar cells is discussed. This device structure has resulted in fill factor values as high as 0.771.Keywords
This publication has 7 references indexed in Scilit:
- An amorphous silicon solar cell having a conversion efficiency of 10.50 percentIEEE Electron Device Letters, 1984
- A novel structure, high conversion efficiency p-SiC/graded p-SiC/i-Si/n-Si/metal substrate-type amorphous silicon solar cellJournal of Applied Physics, 1984
- Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cellsApplied Physics Letters, 1984
- Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cellsSolar Energy Materials, 1982
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Amorphous silicon solar cellApplied Physics Letters, 1976