Far-infra-red emission from two-dimensional plasmon in AlGaAs/GaAs heterostructure
- 31 July 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (16) , 877-878
- https://doi.org/10.1049/el:19860599
Abstract
The far-infra-red (FIR) emission from the grating-coupled two-dimensional (2-D) plasmon in an AlGaAs/GaAs heterointerface was investigated and a quite high emission power of 30 μW/cm2 (460 μm wavelength) was obtained under an applied electric field of 760 V/cm. This output power is three orders of magnitude higher than that reported previously. Our calculations suggest that an applied field of 2–3 kV/cm is sufficient to offer FIR (100–200 μm) emission in excess of milliwatts/centimetre2.Keywords
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