Doping profiles from the capacity-voltage (C–V) characteristics of the [111] Si(p) single crystals doped by the In + -ion-implantation
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 47 (1-4) , 163-166
- https://doi.org/10.1080/00337578008209204
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Motion of positrons in metalsApplied Physics B Laser and Optics, 1974
- Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniquesJournal of Applied Physics, 1974
- Ion-Implanted Phosphorous in Silicon: Profiles Using C-V AnalysisJournal of Applied Physics, 1971