Stability and surface charge in the MOS system†
- 1 January 1968
- journal article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 24 (1) , 1-9
- https://doi.org/10.1080/00207216808937996
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2systemIEEE Transactions on Electron Devices, 1966
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Structural Evaluation of Silicon Oxide FilmsJournal of the Electrochemical Society, 1965
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962