All-optical wavelength switching in a semiconductor laser using self-seeding and external injection-seeding
- 2 March 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (9) , 1024-1026
- https://doi.org/10.1063/1.120953
Abstract
We developed an approach for efficient optical switching by employing the mechanism of gain competition between two different wavelengths. The lasing wavelengths are obtained by self-seeding and external injection-seeding of the same gain-switched Fabry–Pérot laser diode. A direct comparison shows that the latter yields a faster switching response owing to the injection of continuous oscillations. Optical switching has been demonstrated over a 20 nm tuning range with an injection power as small as 10 μW. An operating bandwidth in the tens of MHz frequency range can be expected using the switching scheme.Keywords
This publication has 7 references indexed in Scilit:
- Effective generation of tunable single- and multiwavelength optical pulses from a Fabry-Perot laser diodeIEEE Photonics Technology Letters, 1997
- Generation of wavelength tunable gain-switched pulses from FP MQW lasers with external injection seedingIEEE Photonics Technology Letters, 1997
- Large-signal analysis of all-optical wavelength conversion using two-mode injection-locking in semiconductor lasersIEEE Journal of Quantum Electronics, 1997
- Fast wavelength switching of semiconductor laser pulses by self-seedingApplied Physics Letters, 1996
- Injection power and wavelength dependence of an external-seeded gain-switched Fabry–Perot laserApplied Physics Letters, 1995
- Highly attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodesIEEE Journal of Quantum Electronics, 1993
- Picosecond (< 2.5 ps) wavelength-tunable (~20 nm) semiconductor laser pulses with repetition rates up to 12 GHzElectronics Letters, 1992