Interface and surface structure of epitaxial NiSi2 films
- 15 June 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12) , 988-990
- https://doi.org/10.1063/1.92222
Abstract
Epitaxial NiSi2 films have been grown on (100) and (111) Si. Interface and surface structures have been examined by Rutherford backscattering and channeling, transmission electron microscopy, and low‐energy electron diffraction. The (111) interface is remarkably flat, whereas the (100) interface has {111} facets. The NiSi2 (111) surface has a bulklike periodicity parallel to the surface, whereas the (100) surface exhibits reconstruction periodicity.Keywords
This publication has 3 references indexed in Scilit:
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- Elastic Scattering of Low-Energy Electrons from SurfacesPublished by Elsevier ,1974