A Monolithic Single-Chip X-Band Four-Bit Phase Shifter
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (12) , 2201-2206
- https://doi.org/10.1109/tmtt.1982.1131408
Abstract
X-band GaAs monolithic passive phase shifter with 22.5°, 45°, 90°, and 180° phase bits are developed using FET switches. By cascading all four bits, a four-bit digital phase shifter with 5.1+-0.6-dB insertion loss is realized on a single 6.4 x 7.9 x 0.1-mm chip.Keywords
This publication has 2 references indexed in Scilit:
- Microwave GaAs FET SwitchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Microwave switching with parallel-resonated GaAs FETSIEEE Electron Device Letters, 1980