Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers
- 26 July 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 37 (4) , 215-218
- https://doi.org/10.1103/physrevlett.37.215
Abstract
The frequency-dependent conductivity of a two-dimensional interacting electron gas in the presence of a random array of scattering centers and a dc magnetic field is studied. Electron-electron interaction effects enter through the holomorphic memory function whose imaginary part is the inverse of the frequency-dependent relaxation time . A qualitative explanation of some of the perplexing results observed in infrared cyclotron resonance, including how electron-electron interactions affect both the fundamental and harmonics, is given.
Keywords
This publication has 20 references indexed in Scilit:
- Correlation Energy and Effective Mass of Electrons in an Inversion LayerPhysical Review Letters, 1975
- Electron-electron interactions in the surface inversion layer of a semiconductorSolid State Communications, 1975
- Effective Mass andFactor of Interacting Electrons in the Surface Inversion Layer of SiliconPhysical Review Letters, 1975
- Theory of Oscillatory g Factor in an MOS Inversion Layer under Strong Magnetic FieldsJournal of the Physics Society Japan, 1974
- Far-Infrared Cyclotron Resonance in the Inversion Layer of SiliconPhysical Review Letters, 1974
- Cyclotron Resonance of Electrons in an Inversion Layer on SiPhysical Review Letters, 1974
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Factor of the Two-Dimensional Interacting Electron GasPhysical Review B, 1969
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Cyclotron Resonance and de Haas-van Alphen Oscillations of an Interacting Electron GasPhysical Review B, 1961