Laser irradiation effects on tunneling properties of n-type GaAs and InAs by scanning tunneling microscopy
- 10 June 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (24) , 3479-3481
- https://doi.org/10.1063/1.115764
Abstract
We have studied the effect of laser irradiation on the tunneling properties of n‐type GaAs and InAs by scanning tunneling microscopy. We measured the changes of tip height between on and off cycles of the laser light at different wavelengths and laser power. The laser‐induced tip‐sample separation is observed to be very large in GaAs compared with InAs when above‐band‐gap laser light is used. This result can be explained in terms of the shrinkage of the surface depletion layers by generated photocarriers.Keywords
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