ZnO Nanowire Transistors

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Abstract
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (μe = 13 ± 5 cm2 V-1 s-1), with carrier concentrations averaging 5.2 ± 2.5 × 1017 cm-3 and on−off current ratios ranging from 105 to 107. Four probe measurements show that the resistivity of the Ti/Au−ZnO contacts is 0.002−0.02 Ω·cm. The performance characteristics of the nanowire transistors are intimately tied to the presence and nature of adsorbed surface species. In addition, we describe a dynamic gate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, among other effects.
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