200W push-pull & 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications
- 27 August 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (0149645X) , 69-72
- https://doi.org/10.1109/mwsym.2003.1210885
Abstract
The performance of a 200W push-pull device and a 110W single-ended device, both using state-of-the-art silicon RF-LDMOS die technology, is described. In the 2.1 GHz band with a two-carrier WCDMA signal applied and a supply voltage of 28V, -37 dBc IM3 and 25-26% drain efficiency is achieved at 38W and 19W respectively for the two devices. This combination of linear power and efficiency make these devices ideally suited for power amplifier designs in basestation transceiver systems.Keywords
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