Abstract
A formal theory of polariton Raman scattering in insulators is developed, utilizing both the equation-of-motion and scattering-operator techniques, and the temperature-dependent cross section is obtained. Explicit forms are derived for polariton dispersions and transformation coefficients, and for the Raman cross section, for various specific cases, among them a nondispersive hydrogenic exciton-band model. Numerical calculations are carried out for the latter model; the resulting cross section displays considerable variation with incoming frequency, displaying, among other things, in-out resonances with discrete states, and interference between discrete and continuum contributions to scattering. Comparison with other results and with experiment is given.

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