Optical Mixing by Mobile Carriers in Semiconductors
- 19 August 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 21 (8) , 539-541
- https://doi.org/10.1103/physrevlett.21.539
Abstract
It is shown that certain nonlinearities associated with the energy dependence of the carrier-momentum relaxation time in semiconductors make contributions to the optically mixed output, which may be larger than the ones considered by earlier workers.Keywords
This publication has 5 references indexed in Scilit:
- Microwave third harmonic generation in semiconductors at low temperaturesProceedings of the Physical Society, 1967
- Theory of Optical Mixing by Mobile Carriers in SemiconductorsPhysical Review Letters, 1966
- Optical Nonlinearities due to Mobile Carriers in SemiconductorsPhysical Review Letters, 1966
- Scattering mechanisms in indium antimonide at low temperaturesBritish Journal of Applied Physics, 1966
- Optical Nonlinearities of a PlasmaPhysical Review B, 1966