Fabrication of wires in silicon germanium material
- 30 April 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 21 (1-4) , 349-352
- https://doi.org/10.1016/0167-9317(93)90089-n
Abstract
No abstract availableKeywords
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- Studies of the reactive ion etching of SiGe alloysJournal of Vacuum Science & Technology A, 1991
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990