Microwave Nanosecond Pulse Burnout Properties of GaAs MESFET's
- 1 December 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (12) , 1026-1031
- https://doi.org/10.1109/tmtt.1979.1129785
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Reliability Study of Microwave GaAs Field-Effect Transistors8th Reliability Physics Symposium, 1978
- Some Aspects of GaAs MESFET ReliabilityIEEE Transactions on Microwave Theory and Techniques, 1976