Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface
- 1 July 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (1) , 103-105
- https://doi.org/10.1063/1.118088
Abstract
It is demonstrated that pre‐existing silicon dangling bonds in Al‐gate metal‐oxide‐semiconductor capacitors on (111) silicon substrates are passivated during hot‐electron stress, while defects—of an as yet unidentified nature—are simultaneously generated. This degradation behavior mimics the interface degradation caused by atomic hydrogen from a remote plasma, suggesting that hydrogen release by hot electrons leads to interface degradation, but the silicon dangling bond is not the dominant interface defect.Keywords
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