Role of C and B clusters in transient diffusion of B in silicon
- 19 February 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (8) , 1150-1152
- https://doi.org/10.1063/1.115706
Abstract
Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is ≊1.15 for C and ∼1 for B, consistent with a volume compensation mechanism.Keywords
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