Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell

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Abstract
Optimization of the photovoltaic performance in the plasma deposited a-Si:H heteroface p-i-n junction solar cells has been experimentally studied. A series of systematic experiments on the relation between photovoltaic performances and substrate-positive column distance with several power density have been carried out. As the results, a-Si:H solar cell fabrication technology realizing a conversion efficiency of higher than 5.5% under AM-1 sun light has been developed with a considerably good reproduceablity. Moreover, it has been demonstrated that a conversion efficiency exceeding 6.1% is obtained in designing of an optimized i-layer sandwitched with a wide band gap a-SiC:H front p-layer and a low resistivity n-type back electrode.

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