Theory of Substitutional Deep Traps in Covalent Semiconductors
- 24 March 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (12) , 810-813
- https://doi.org/10.1103/physrevlett.44.810
Abstract
The energies of substitutional deep impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies.
Keywords
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