Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry

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Abstract
Diffuse reflectance infrared Fourier transform spectrometry was applied to the determination of SiO2 in SiC powders. The main peaks of SiO2 were observed in the 1000–1250 cm−1 region. The peak intensities were estimated from the peak height at 1150 cm−1. The intensities were little affected by the particle sizes of SiC powders in the 1–9–μm region. The linear relationship between peak intensity and concentration was obtained in the concentration range of 0–5 wt% SiO2. The analytical curve was successfully used for the determination of SiO2 in a few commercial SiC powders.