InGaAsP carrier injection modulator integrated with DFB LD

26 February 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (5) , 190-192
https://doi.org/10.1049/el:19870134

Abstract

Basic characteristics for InGaAsP carrier injection modulators integrated with distributed feedback laser diodies (DFB LDs) have been investigated. 450Mbit/s nonreturn-to-zero (NRZ) pulse modulation with time-averaged spectral line-width as narrow as 600 MHz has been achieved.

Keywords

TIME-AVERAGED SPECTRAL LINEWIDTHS
DISTRIBUTED FEEDBACK LASER DIODES
NRZ PULSE MODULATION
600 MHZ
INTEGRATED OPTOELECTRONICS
III-V SEMICONDUCTOR
OPTICAL COMMUNICATION EQUIPMENT
450 MBIT/S
DFB LASERS
INGAASP CARRIER INJECTION MODULATOR
DOUBLE CHANNEL PLANAR BURIED HETEROSTRUCTURE

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