Thermal resistance characterization of 200 GHz F/sub t/ InGaAs/InAlAs HBTs
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10928669,p. 79-82
- https://doi.org/10.1109/iciprm.2002.1014116
Abstract
We present the results of measurements of the thermal resistivity of InP-based HBTs with cutoff frequencies, f/sub t/ /spl sim/200 GHz and with f/sub max/ over 300 GHz. The measurements were on full-thickness 3" InP wafers at T/sub amb/ from 30 - 210/spl deg/C and three separate emitter current densities. We present data on three device sizes and two device layouts and discuss the relationship of V/sub be/ to temperature at these elevated power and temperature levels.Keywords
This publication has 2 references indexed in Scilit:
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