Hot electrons in Si inversion layer
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 48-55
- https://doi.org/10.1016/0039-6028(76)90111-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: I. Bulk phonon treatmentSurface Science, 1974
- Warm and hot carriers in silicon surface-inversion layersPhysical Review B, 1974
- Hot carriers in silicon surface inversion layersJournal of Applied Physics, 1974
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- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Phonons in a half spaceAnnals of Physics, 1971
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960