Properties of titanium layers deposited by collimation sputtering
- 1 March 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 12 (2) , 506-508
- https://doi.org/10.1116/1.579159
Abstract
Thin Ti films are deposited by collimation sputtering. Resistivity is around 80 μΩ cm in the as-deposited collimation film. This value does not decrease with the increase of sputtering power and of deposition rate, and is higher than that of 60–65 μΩ cm in film by conventional sputtering. Strongly (002) oriented Ti film is deposited in conventional sputtering. However, weak (002) and (101) peaks appear in films by collimation sputtering. X-ray intensity ratio, I(002)/[I(002)+I(101)], indicating the grain growth of preferential Ti(002), does not increase to 0.93 attained in the conventional sputtering with increasing power.Keywords
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