High-power quantum-dot lasers at 1100 nm
- 31 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (5) , 556-558
- https://doi.org/10.1063/1.125816
Abstract
High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal–organic chemical-vapor deposition are demonstrated. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), respectively, during pulsed operation at room temperature and show slope efficiencies of 57% (66%).Keywords
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