Two-dimensional potential profile measurement of GaAs HEMT's by Kelvin probe force microscopy
- 1 September 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (9) , 423-425
- https://doi.org/10.1109/55.622517
Abstract
Two-dimensional (2-D) potential profile of GaAs HEMT's under bias voltage has been successfully measured by combining Kelvin probe force microscopy with cleavage of the HEMT's. The spatial resolution evaluated by measuring GaAs-AlAs multiquantum-well structure was less than 70 nm. The measured depth profile of the potential shows a potential knee, which probably originates from the charge trapped at the interface between the epitaxial layer and the substrate. The high-field region is observed at the drain-side edge of the gate. The present KFM technique will yield a powerful tool for analysis of the electrical properties of the devices.Keywords
This publication has 6 references indexed in Scilit:
- Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Kelvin probe force microscopy for characterization of semiconductor devices and processesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Kelvin probe force microscopy for potential distribution measurement of semiconductor devicesJournal of Applied Physics, 1995
- Two-dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopyJournal of Applied Physics, 1995
- Surface investigations with a Kelvin probe force microscopeUltramicroscopy, 1992
- Kelvin probe force microscopyApplied Physics Letters, 1991