A new insulated-gate silicon transistor

• 1 January 1966
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 54  (1) , 87-88
• https://doi.org/10.1109/PROC.1966.4607

Abstract

Keywords

• SILICON
• CAPACITANCE
• DIELECTRICS AND ELECTRICAL INSULATION
• IMPURITIES
• DOPING
• VOLTAGE
• DIELECTRIC MATERIALS
• SEMICONDUCTOR MATERIALS
• DIELECTRIC BREAKDOWN
• FABRICATION