Deep valence-band trap defect conversion by light soaking of a-Si:H
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 600-602
- https://doi.org/10.1016/0022-3093(89)90662-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Tail-state distribution and trapping probability in a-Si:H investigated by time-of-flight experiments and computer simulationsPhilosophical Magazine Part B, 1989
- Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tailPhilosophical Magazine Part B, 1988
- Photomodulation of the photoelectric yield from a-Si:HJournal of Non-Crystalline Solids, 1987
- Gap-state distribution in n-type and p-type a-Si:H from optical absorptionJournal of Non-Crystalline Solids, 1987
- Single and double carrier injection in A-Si:HJournal of Non-Crystalline Solids, 1984