Electron energy loss spectroscopy of H-terminated Si(111) and Si(100) prepared by chemical etching

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Abstract
H-passivated Si(111) and Si(100) surfaces, prepared by chemical etching in a 40% ammonium fluoride solution, are investigated with high resolution electron energy loss spectroscopy. Extensive off-specular and energy dependence studies reveal that the scattering process is not dipolar, as previously thought, but rather is dominated by short-range interactions. On the atomically flat H/Si(111)-(1×1) surface, two new substrate phonons are observed in addition to the Si–H stretch (2084 cm−1), the Si–H bend (636 cm−1), and the 520-cm−1 substrate mode: a loss at 390 cm−1 assigned to a bulk phonon transition and a loss at 110 cm−1 assigned to a surface phonon resonance.

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