High-power C band Read IMPATT diodes
- 4 September 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (18) , 430-431
- https://doi.org/10.1049/el:19750331
Abstract
A GaAs multimesa Read IMPATT-diode structure has been developed for operation in C band. Such devices give reproducible oscillator power output levels in excess of 10 W c.w. at 5 GHz. Junction temperature rises less than1 80 deg C are observed during high-power operation. The diodes are constructed with an integral gold-plated heatsink and bonded with Au : Sn eutectic solder in a small package.Keywords
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