Step edge diffusion and the structure of nanometer-size Ir islands on the Ir(111) surface
- 20 October 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 366 (2) , L691-L696
- https://doi.org/10.1016/0039-6028(96)00940-5
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Abinitiocalculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growthPhysical Review B, 1996
- Accommodation and diffusion of Cu deposited on flat and stepped Cu(111) surfacesPhysical Review B, 1993
- Inversion of growth speed anisotropy in two dimensionsPhysical Review Letters, 1993
- Effect of step edge transition rates and anisotropy in simulations of epitaxial growthJournal of Vacuum Science & Technology A, 1991
- Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substratesPhysical Review Letters, 1990
- Theory of Adsorbate InteractionsAnnual Review of Physical Chemistry, 1989
- Nucleation and growth of epitaxial silicon on Si(001) and Si(111) surfaces by scanning tunneling microscopyUltramicroscopy, 1989
- Rate equation modelling of epitaxial growthSurface Science, 1989
- Direct measurement of pair energies in adatom-adatom interactions on a metal surfacePhysical Review B, 1981
- Theory of indirect interaction between chemisorbed atomsCritical Reviews in Solid State and Materials Sciences, 1978