ZnGeP2: A Wide Bandgap Chalcopyrite Structure Semiconductor for Nonlinear Optical Applications
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substratesJournal of Crystal Growth, 1989
- Doubling of the emission frequency of CO lasers with an efficiency of 3%Soviet Journal of Quantum Electronics, 1987
- Conversion of CO2and CO laser radiations in a ZnGeP2crystal to the 2.3–3.1 μ spectral rangeSoviet Journal of Quantum Electronics, 1985
- Photoluminescence of p-type ZnGeP2 crystalsPhysica Status Solidi (a), 1977
- Energy band structure and modulation spectra of A2B4C25 semiconductorsSurface Science, 1973
- PHASE-MATCHED UP CONVERSION OF 10.6-μ RADIATION IN ZnGeP2Applied Physics Letters, 1971
- LINEAR AND NONLINEAR OPTICAL PROPERTIES OF ZnGeP2 AND CdSeApplied Physics Letters, 1971