Measuring the base resistance of bipolar transistors

9 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 200-203
https://doi.org/10.1109/bipol.1991.160988

Abstract

Methods of measuring the base resistance of bipolar transistors are examined and compared using a two-dimensional device simulator. It was found that the accuracy of these models is dependent on their representation of the base-collector capacitance in the transistor equivalent circuit model. A novel method which uses the equivalent circuit model without being influenced by the external base-collector capacitance is proposed. The proposed model is useful in estimating the base resistance at all current levels.<>

Keywords

ELECTRICAL RESISTANCE MEASUREMENT
BIPOLAR TRANSISTORS
IMPEDANCE
FREQUENCY MEASUREMENT
EQUIVALENT CIRCUITS
VOLTAGE
CIRCUIT SIMULATION
FREQUENCY ESTIMATION
CAPACITANCE MEASUREMENT
ULTRA LARGE SCALE INTEGRATION

This publication has 1 reference indexed in Scilit:

Method for determining the emitter and base series resistances of bipolar transistors
IEEE Transactions on Electron Devices, 1984