New GaAlAs-GaAs surface-emitting laser diodes with lateral pumping structure

29 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (3) , 123-124
https://doi.org/10.1049/el:19870087

Abstract

We have fabricated a new GaAlAs/GaAs surface-emitting laser diode with lateral pumping structure. With this structure, the thickness of the active layer can be increased beyond the electron diffusion length, and also both current and light confinement can be incorporated. The lowest threshold current was 180 mA. The far-field pattern shows stable double lobes with an FWHM of 39°. By reducing the size of the mesa, making the wall of the mesa vertical and using the GaAlAs/GaAs quarter-wave stack for the mirror, further improvement can be expected.

Keywords

QUARTER-WAVE STACK
180 MA
ELECTRON DIFFUSION LENGTH
MESA
STABLE DOUBLE LOBES
GAALAS-GAAS
SURFACE-EMITTING LASER DIODES
FWHM
ACTIVE LAYER
LIGHT CONFINEMENT
FAR-FIELD PATTERN
LATERAL PUMPING STRUCTURE

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