Characteristics of ion-implanted contacts for nuclear particle detectors: II. Concentration distribution in ion-implanted contacts for semiconductor detectors
- 1 May 1969
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 70 (3) , 285-290
- https://doi.org/10.1016/0029-554x(69)90052-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Characteristics of ion-implanted contacts for nuclear particle detectors: I. Window thickness of ion-implanted semiconductor detectorsNuclear Instruments and Methods, 1969
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- Theory of "Supertails" of Ions Bombarded into CrystalsPhysical Review Letters, 1966
- DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICONApplied Physics Letters, 1966
- ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS—A DIFFUSION EFFECTCanadian Journal of Physics, 1966
- RANGE OF Xe133 AND Ar41 IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUMCanadian Journal of Physics, 1963