Determination of concentrations of donors and acceptors in GaAs by an optical method
- 15 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (10) , 652-654
- https://doi.org/10.1063/1.89512
Abstract
The concentrations of donors (ND) and acceptors (NA) in a high‐quality GaAs epitaxial layer sample are determined by the optical method. The numerical values of ND and NA are deduced from the limiting values of combinations of the excitation‐dependent integrated emission intensities due to the conduction‐band–to–neutral‐acceptor, neutral‐donor–to–valence‐band, and neutral‐donor–to–neutral‐acceptor transitions.Keywords
This publication has 1 reference indexed in Scilit:
- Optical determination of impurity compensation in n-type gallium arsenideJournal of Applied Physics, 1977