Controlled hydrogenation of amorphous silicon at low temperatures
- 1 May 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 604-606
- https://doi.org/10.1063/1.90890
Abstract
Silicon‐ion bombardment of crystalline Si and hydrogen‐ion implantation are used to produce high‐purity amorphous Si with controlled hydrogenation at low temperatures. Hydrogen implanted into amorphous Si chemically bonds predominantly in monohydride (SiH) centers over a wide range of hydrogen concentration. Predominance of monohydride over polyhydride (SiH2) formation in bombardment‐produced amorphous Si is independent of the order of hydrogenation and amorphization, and the results suggest that a high disorder level favors monohydride formation. This suggestion is supported by ion‐bombardment‐induced conversion of SiH2 to SiH1 centers in sputter‐deposited films.Keywords
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