Investigation of crystallographic properties of thin germanium crystals grown on silicon substrates by chemical vapor deposition
- 1 April 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 102 (4) , 327-343
- https://doi.org/10.1016/0040-6090(83)90050-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- 13. Measurement of the lattice constant of SiGe heteroepitaxial layers grown on a silicon substrateVacuum, 1978
- Some practical remarks on the design of experimental systems for expitaxial growth of Si, Ge and SiGeVacuum, 1974
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- Epitaxial growth of silicon-germanium single crystalsThin Solid Films, 1972
- Growth and Properties of Thin Germanium FilmsJournal of the Electrochemical Society, 1970
- Experimental techniques for observing dislocations by the Berg–Barrett methodActa Crystallographica Section A, 1968