Lifetime and capture cross-section studies of deep impurities in silicon
- 31 January 1968
- journal article
- Published by Elsevier in Materials Science and Engineering
- Vol. 2 (5) , 229-241
- https://doi.org/10.1016/0025-5416(68)90036-0
Abstract
No abstract availableKeywords
This publication has 80 references indexed in Scilit:
- Deep impurities in siliconMaterials Science and Engineering, 1967
- Low-Temperature Recombination of Electrons and Donors in-Type Germanium and SiliconPhysical Review B, 1967
- Helium‐Like Impurities in SemiconductorsPhysica Status Solidi (b), 1967
- Phonon cascade theoryJournal of Physics and Chemistry of Solids, 1966
- Effect of Impurity Conduction on Electron Recombination in Germanium and Silicon at Low TemperaturesPhysical Review B, 1966
- Electric Field Effects in Trapping ProcessesJournal of Applied Physics, 1966
- Recombination of Electrons and Donors in-Type Germanium. BPhysical Review B, 1962
- Recombination of Electrons and Donors in-Type GermaniumPhysical Review B, 1961
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Giant trapsJournal of Physics and Chemistry of Solids, 1959