Epitaxial Growth of SiO2 on Mo(112)
- 1 April 2000
- journal article
- research article
- Published by World Scientific Pub Co Pte Ltd in Surface Review and Letters
- Vol. 7 (1-2) , 7-14
- https://doi.org/10.1016/s0218-625x(00)00003-8
Abstract
A new preparation is reported which, for the first time, results in a thin, crystalline SiO2 film on a Mo(112) single crystal. The procedure consists of repeated cycles of silicon deposition and subsequent oxidation, followed by a final annealing procedure. AES and XPS have been used to control film stoichiometry. LEED pictures of high contrast show a hexagonal, crystalline SiO2 overlayer with a commensurate relationship to the Mo(112) substrate. The wetting of the substrate by the film has been investigated by LEED, XPS and TDS, revealing that the film covers the substrate completely.Keywords
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