Correcting for Oxygen Concentrations in Single-Side Polished Wafers
- 1 January 1991
- journal article
- research article
- Published by SAGE Publications in Applied Spectroscopy
- Vol. 45 (1) , 121-123
- https://doi.org/10.1366/0003702914337830
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A Technique for Obtaining the Infrared Reflectivity of Back Side‐Damaged Silicon SamplesJournal of the Electrochemical Society, 1990
- Correction Factors for the Determination of Oxygen in Silicon by IR SpectrometryJournal of the Electrochemical Society, 1989
- Measurement of the Oxygen and Carbon Content of Silicon Wafers by Fourier Transform IR SpectrophotometryPublished by American Chemical Society (ACS) ,1986
- Precise Evaluation of Oxygen Measurements on CZ‐Silicon WafersJournal of the Electrochemical Society, 1983
- Analysis of Infrared Spectra for Oxygen Measurements in SiliconPublished by ASTM International ,1983