Properties of carbon films by dc plasma deposition
- 15 August 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4) , 370-372
- https://doi.org/10.1063/1.96168
Abstract
Perfectly smooth transparent carbon films deposit onto room‐temperature silicon wafers in a dc plasma of methane (CH4) and hydrogen (H2). Transmission electron microscope analysis reveals that the films consist primarily of amorphous carbon (a‐C). The nearest neighbor C–C bond length of a‐C formed at low discharge current densities or low working pressures approaches that of diamond. Electrical resistivity, calculated using V‐I curves for the Al‐C‐Si structure, is more than 1013 Ω cm. A face‐centered‐cubic phase with a lattice constant of 4.96 Å and diamond, both of which form at relatively high pressures, consist of crystallites having a diameter of about 100 Å.Keywords
This publication has 12 references indexed in Scilit:
- Vapor Deposition of Diamond Particles from MethaneJapanese Journal of Applied Physics, 1982
- Structural investigation of thin films of diamondlike carbonJournal of Applied Physics, 1981
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981
- Electron spectroscopy of ion beam and hydrocarbon plasma generated diamondlike carbon filmsJournal of Vacuum Science and Technology, 1981
- Diamond-like carbon films produced in a butane plasmaThin Solid Films, 1979
- The growth of carbon films with random atomic structure from ion impact damage in a hydrocarbon plasmaThin Solid Films, 1979
- Electrical, structural and optical properties of amorphous carbonJournal of Non-Crystalline Solids, 1977
- Ion-beam-deposited polycrystalline diamondlike filmsApplied Physics Letters, 1976
- The deposition of hard surface layers by hydrocarbon cracking in a glow dischargeThin Solid Films, 1976
- Ion-Beam Deposition of Thin Films of Diamondlike CarbonJournal of Applied Physics, 1971