Planar processing for magnetic bubble devices
- 1 November 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 12 (6) , 618-621
- https://doi.org/10.1109/tmag.1976.1059097
Abstract
A two-mask level, conductor first thin film process is described for fabrication of magnetic bubble devices. The process permits a stepless permalloy level over a conductor that may be two to three times as thick as conventional processing The planar process is attained by anodizing a thick aluminum alloy film in all regions where no conductor is needed. The process described solves problems in conventional processing caused by thin conductor metalization and permalloy step coverage. Replication, nucleation, and annihilation devices made with this process promise superior performance.Keywords
This publication has 2 references indexed in Scilit:
- An Anodic Process for Forming Planar Interconnection Metallization for Multilevel LSIJournal of the Electrochemical Society, 1975
- Fabrication of large bubble circuitsIEEE Transactions on Magnetics, 1973