A simple computer model of a low energy nitrogen implanted molybdenum single crystal

1 January 1983

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 79 (1) , 131-139
https://doi.org/10.1080/00337578308207400

Abstract

A computer simulation of low energy implantation is presented. The method of calculation takes into account the inelastic processes and vacancies in the crystal lattice. The described simulation was used for a nitrogen implanted molybdenum single crystal. From the result of the calculation the possible positions of implanted nitrogen on the surface and in the bulk were obtained. The results of simulations are compared with those measured by SIMS and AES.

Keywords

COMPUTER SIMULATION
SINGLE CRYSTAL
NITROGEN
COMPUTER MODEL

This publication has 2 references indexed in Scilit:

A case of underlayer chemisorption: β-nitrogen on W{110}
Surface Science, 1979
Application of the Morse Potential Function to Cubic Metals
Physical Review B, 1959